Si Wafer (111), 2" dia x 0.279 mm, 1SP, N type, As- doped, R<0.005 ohm-cm - SIAsc50D0279C1 Ceramic & Glass Substrate A-Z Slotting Width and Shim

Slotting Width and Shim

Edge Orientation:   <001> +/-1 Deg with 16 mm +/- 1 mm Length

Vacuum Drying Ovens

(click Pic to order)

Carrier concentration:     <10^14 cm^-3

Si Wafer (111), 2" dia x 0.279 mm, 1SP, N type, As- doped, R<0.005 ohm-cm - SIAsc50D0279C1 Ceramic & Glass Substrate A-Z Slotting Width and ShimSingle crystal Silicon Conductive type: N type As doped Resistivity: <0. 005 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 279 + 0. 025 mm Orientation: (111) + 1o Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner